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c opyright ruichips semiconductor co . , ltd rev . a C may ., 2012 www. ruichips .com ru 2 0 9 0 m n - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t c =25 c un less otherwise noted) v dss drain - source voltage 2 0 v gss gate - source voltage 12 v t j maximum junction temperature 1 50 c t stg storage temperature range - 55 to 1 50 c i s diode continuous forward current t c =25 c 50 a mounted on large heat sink i d p 3 00 s pulse drain current tested t c =25 c 3 6 0 a t c =25 c 9 9 t c =100 c 6 6 a t a =25 c 2 6 i d continuous drain current ( v gs =10v) t a = 7 0 c 21 t c =25 c 6 6 t c =100 c 26 w t a =25 c 4.2 p d maximum power dissipation t a = 7 0 c 2.7 ? 2 0 v/ 9 9 a, r ds ( on ) = 2 . 3 m ( tpy.)@ v gs =10v r ds ( on ) = 4 m ( tpy.)@ v gs = 4.5 v ? super high dense cell design ? reliable and rugged ? 100% avalanche tested ? lead free and green devices available ( rohs compliant) ? rectification ? switching application absolute max imum ratings n - channel mosfe t pdfn 5x6
c opyright ruichips semiconductor co . , ltd rev . a C may ., 2012 2 www. ruichips .com ru 2 0 9 0 m mounted on large heat sink r q jc thermal resistance - junction to case 1.9 c /w r q j a thermal resistance - junction to ambient 30 c /w drain - source avalanche ratings e as avalanche energy, single pulsed 306 m j electrical characteristics ( t c =25 c unless otherwise noted) ru 2 0 9 0 m symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds =250 m a 2 0 v v ds = 2 0 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 1 - 2.5 v i gss gate leakage current v gs = 12 v, v ds =0v 10 0 n a v gs = 10 v, i ds = 20 a 2 . 3 3 m w r ds ( on ) drain - source on - state resistance v gs = 4.5 v, i ds = 20 a 4 6 m w d iode characteristics v sd diode forward voltage i sd = 2 0 a, v gs =0v 1. 2 v t rr reverse recovery time 3 0 ns q rr reverse recovery charge i sd = 20 a, dl sd /dt=100a/ m s 5 6 nc dynamic characteristics r g gate r esistance v gs = 0 v,v ds =0v ,f=1mhz 1. 9 w c iss input capacitance 3 3 0 0 c oss output capacitance 8 2 0 c rss reverse transfer capacitance v gs =0v, v ds = 1 0 v, frequency=1.0mhz 1 6 5 pf t d ( on ) turn - on delay time 1 5 t r turn - on rise time 3 7 t d ( off ) turn - off delay time 5 5 t f turn - off fall time v dd = 1 0 v, r l = 0 . 5 w , i ds = 20 a, v gen =10v, r g = 1.6 w 1 9 ns gate charge characteristics q g total gate charge 6 2 q gs gate - source charge 1 5 q gd gate - drain charge v ds = 16 v, v gs =10v, i ds = 20 a 2 1 nc c opyright ruichips semiconductor co . , ltd rev . a C may ., 2012 3 www. ruichips .com ru 2 0 9 0 m note s : max cu rrent is limited to 50a by the package. pulse width limited by safe operating area. when mounted on 1 inch square copper boa rd , t 10sec . limited by t jmax , i as = 3 5 a, v dd = 16 v, r g = 50 , starting t j = 25c . pulse test ; p ulse width 3 0 0 m s, duty cycle 2% . guaranteed by design, not subject to production testing . ordering and marking information device marking package packaging quantity reel size tape width ru 2 0 9 0 m ru 2 0 9 0 m pdfn 5x6 tape&reel 3000 13 12mm c opyright ruichips semiconductor co . , ltd rev . a C may ., 2012 4 www. ruichips .com ru 2 0 9 0 m typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration ( sec) c opyright ruichips semiconductor co . , ltd rev . a C may ., 2012 5 www. ruichips .com ru 2 0 9 0 m typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistan ce (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c) c opyright ruichips semiconductor co . , ltd rev . a C may ., 2012 6 www. ruichips .com ru 2 0 9 0 m typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction temperature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc) c opyright ruichips semiconductor co . , ltd rev . a C may ., 2012 7 www. ruichips .com ru 2 0 9 0 m avalanche test circuit and waveforms switching time test circuit and waveforms c opyright ruichips semiconductor co . , ltd rev . a C may ., 2012 8 www. ruichips .com ru 2 0 9 0 m package information pdfn 5x6 all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min max min max symbo l min max min max a 1.030 1.170 0.040 0.046 e2 1.600 - 0.063 - b 0.340 0.480 0.013 0.019 e 1.270 bsc 0.050 bsc c 0.824 0.970 0.032 0.038 l 0.050 0.250 0.002 0.010 d 4.800 5.400 0.189 0.213 l1 0.380 0.500 0.015 0.020 d1 4.1 10 4.310 0.162 0.170 l2 0.380 0.500 0.015 0.020 d2 4.800 5.000 0.189 0.197 h 3.500 3.700 0.138 0.146 e 5.950 6.150 0.234 0.242 i - 0.180 - 0.007 e1 5.650 5.850 0.222 0.230 c opyright ruichips semiconductor co . , ltd rev . a C may ., 2012 9 www. ruichips .com ru 2 0 9 0 m customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editoria l contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconduct or co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com |
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